Sulfur forming an isoelectronic center in zinc telluride thin films

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Sulfur forming an isoelectronic center in zinc telluride thin films
	Ge WK ; Lam SB ; Sou IK ; Wang J ; Wang Y ; Li GH ; Han HX ; Wang ZP
刊名	physical review b
	1997
卷号	55 期号:15 页码:10035-10039
关键词	MOLECULAR-BEAM ZNS-TE GAAS ZNTE ALLOYS
ISSN号	0163-1829
通讯作者	ge wk hong kong univ sci & technoldept physclear water baykowloonhong kong.
中文摘要	znte1-xsx epitaxial layers grown on gaas by molecular-beam epitaxy were studied by photoluminescence (pl) as a function of temperatures, excitation powers, and hydrostatic pressures. a sulfur-related emission peak, labeled as p-2, is identified as a deep-level emission by hydrostatic-pressure pl measurement. this indicates that sulfur atoms form isoelectronic centers in a znte matrix. the results qualitatively agree with the theoretical prediction and show experimental evidence of isoelectronic s in znte. a model is proposed to explain the emission mechanisms in the znte1-xsx system with small x values.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15243]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ge WK,Lam SB,Sou IK,et al. Sulfur forming an isoelectronic center in zinc telluride thin films[J]. physical review b,1997,55(15):10035-10039.
APA	Ge WK.,Lam SB.,Sou IK.,Wang J.,Wang Y.,...&Wang ZP.(1997).Sulfur forming an isoelectronic center in zinc telluride thin films.physical review b,55(15),10035-10039.
MLA	Ge WK,et al."Sulfur forming an isoelectronic center in zinc telluride thin films".physical review b 55.15(1997):10035-10039.