Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

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	Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
	Lu LW ; Ge WK ; Sou IK ; Wang Y ; Wang J ; Ma ZH ; Chen WS ; Wong GKL
刊名	journal of applied physics
	1997
卷号	82 期号:9 页码:4412-4416
关键词	ALLOYS ZNSTE
ISSN号	0021-8979
通讯作者	lu lw hong kong univ sci & technoldept physclear water baykowloonhong kong.
中文摘要	capacitance-voltage, photoluminescence (pl), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type al-doped zns1-xtex epilayers grown by molecular beam epitaxy. the integrated intensity of the pl spectra obtained from al-doped zns0.977te0.023 is lower than that of undoped zns0.977te0.023, indicating that some of the al atoms form nonradiative deep traps. deep level transient fourier spectroscopy (dltfs) spectra of the al-doped zns1-xtex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that al doping leads to the formation of two electron traps 0.21 and 0.39 ev below the conduction band. dltfs results suggest that in addition to the roles of te as a component of the alloy as well as isoelectronic centers, te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as te composition increases. our results show that only a small fraction of al atoms forms nonradiative deep defects, indicating clearly that al is indeed a very good donor impurity for zns1-xtex epilayers in the range of te composition being studied in this work. (c) 1997 american institute of physics. [s0021-8979(97)08421-1].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15123]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Ge WK,Sou IK,et al. Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy[J]. journal of applied physics,1997,82(9):4412-4416.
APA	Lu LW.,Ge WK.,Sou IK.,Wang Y.,Wang J.,...&Wong GKL.(1997).Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy.journal of applied physics,82(9),4412-4416.
MLA	Lu LW,et al."Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy".journal of applied physics 82.9(1997):4412-4416.