FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT | |
MIN Y ; LIN HW ; TSIEN PH ; ZHANG JP ; YIN SD | |
刊名 | ieee transactions on electron devices
![]() |
1989 | |
卷号 | 36期号:3页码:514-521 |
ISSN号 | 0018-9383 |
通讯作者 | min y tsinghua univinst microelectrbeijingpeoples r china |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14519] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | MIN Y,LIN HW,TSIEN PH,et al. FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT[J]. ieee transactions on electron devices,1989,36(3):514-521. |
APA | MIN Y,LIN HW,TSIEN PH,ZHANG JP,&YIN SD.(1989).FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT.ieee transactions on electron devices,36(3),514-521. |
MLA | MIN Y,et al."FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT".ieee transactions on electron devices 36.3(1989):514-521. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论