FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT

	FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT
	MIN Y ; LIN HW ; TSIEN PH ; ZHANG JP ; YIN SD
刊名	ieee transactions on electron devices
	1989
卷号	36 期号:3 页码:514-521
ISSN号	0018-9383
通讯作者	min y tsinghua univinst microelectrbeijingpeoples r china
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14519]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	MIN Y,LIN HW,TSIEN PH,et al. FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT[J]. ieee transactions on electron devices,1989,36(3):514-521.
APA	MIN Y,LIN HW,TSIEN PH,ZHANG JP,&YIN SD.(1989).FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT.ieee transactions on electron devices,36(3),514-521.
MLA	MIN Y,et al."FORMATION OF TISI2 AND SHALLOW JUNCTION BY AS+ ION-BEAM MIXING AND INFRARED RAPID HEAT-TREATMENT".ieee transactions on electron devices 36.3(1989):514-521.