IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES | |
XIAO GM ; YIN SD ; ZHANG JP ; DING AJ ; DONG AH ; ZHU PR ; ZHOU JM | |
刊名 | chinese physics letters
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1991 | |
卷号 | 8期号:3页码:149-152 |
关键词 | QUALITY |
ISSN号 | 0256-307x |
通讯作者 | xiao gm acad sinicainst semicondbeijing 100083peoples r china |
中文摘要 | gaas films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on si have been implanted with si ions at 1.2 mev to dose of 1 x 10(15)/cm2. a rapid infrared thermal annealing and white light annealing were then used for recrystallization. crystalline quality was analysed by using backscattering channeling technique with li ion beam of 4.2 mev. the experimental results show that energy selection is important for obtaining better and uniform recrystallized gaas epilayers. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14261] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | XIAO GM,YIN SD,ZHANG JP,et al. IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES[J]. chinese physics letters,1991,8(3):149-152. |
APA | XIAO GM.,YIN SD.,ZHANG JP.,DING AJ.,DONG AH.,...&ZHOU JM.(1991).IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES.chinese physics letters,8(3),149-152. |
MLA | XIAO GM,et al."IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES".chinese physics letters 8.3(1991):149-152. |
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