IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

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	IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES
	XIAO GM ; YIN SD ; ZHANG JP ; DING AJ ; DONG AH ; ZHU PR ; ZHOU JM
刊名	chinese physics letters
	1991
卷号	8 期号:3 页码:149-152
关键词	QUALITY
ISSN号	0256-307x
通讯作者	xiao gm acad sinicainst semicondbeijing 100083peoples r china
中文摘要	gaas films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on si have been implanted with si ions at 1.2 mev to dose of 1 x 10(15)/cm2. a rapid infrared thermal annealing and white light annealing were then used for recrystallization. crystalline quality was analysed by using backscattering channeling technique with li ion beam of 4.2 mev. the experimental results show that energy selection is important for obtaining better and uniform recrystallized gaas epilayers.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14261]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	XIAO GM,YIN SD,ZHANG JP,et al. IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES[J]. chinese physics letters,1991,8(3):149-152.
APA	XIAO GM.,YIN SD.,ZHANG JP.,DING AJ.,DONG AH.,...&ZHOU JM.(1991).IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES.chinese physics letters,8(3),149-152.
MLA	XIAO GM,et al."IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES".chinese physics letters 8.3(1991):149-152.