SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON

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	SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON
	RIZK R ; DEMIERRY P ; SONG C ; BALLUTAUD D ; PAJOT B
刊名	journal of applied physics
	1991
卷号	70 期号:7 页码:3802-3807
关键词	MICROSCOPIC STRUCTURE ACCEPTOR PAIRS DOPED SILICON BORON DEFECT
ISSN号	0021-8979
通讯作者	rizk r cnrslab phys solides bellevue1 pl aristide briandf-92195 meudonfrance
中文摘要	infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and aluminum-doped-si and implanted p, as, and sb donors in silicon. a first evidence of complex formation in bulk p-type si is obtained and the spectra confirm the anomalous 3.3-cm-1 deuterium frequency shift with respect to boron isotopes. the ratio of the d-b-11 and d-b-10 peak areas is found to be the same as that of the two boron isotopes natural abundance. in donor-implanted silicon, a quantitative analysis of the obtained data has allowed a rough estimate of the passivating rate due to diffusing deuterium. while the frequencies of the various vibrational lines are found to be in agreement with those reported in the literature, the data on the broad line at 1660 cm-1 (h) or 1220 cm-1 (d) seem to suggest an assignment of this peak to a complex in the bulk involving some type of defect due to the implantation process.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14253]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	RIZK R,DEMIERRY P,SONG C,et al. SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON[J]. journal of applied physics,1991,70(7):3802-3807.
APA	RIZK R,DEMIERRY P,SONG C,BALLUTAUD D,&PAJOT B.(1991).SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON.journal of applied physics,70(7),3802-3807.
MLA	RIZK R,et al."SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON".journal of applied physics 70.7(1991):3802-3807.