PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

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	PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS
	ZHONG XR ; ZHOU BJ ; YAN QM ; CAO FN ; LI CJ ; LIN LY ; MA WJ ; ZHENG Y ; TAO F ; XUE ML
刊名	journal of crystal growth
	1992
卷号	119 期号:0 页码:74-78
ISSN号	0022-0248
通讯作者	zhong xr chinese acad sciinst semicondsemicond mat sci labpob 912beijing 100083peoples r china
中文摘要	gaas single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. the impurity striations in gaas grown under high gravity become weak and indistinct with smaller striation spacings. the dislocation density of surcharge-grown gaas increases with increase of centrifugal force. the cathodoluminescence results also show worse perfection in the gaas grown at high gravity than at normal earth gravity.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14201]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	ZHONG XR,ZHOU BJ,YAN QM,et al. PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS[J]. journal of crystal growth,1992,119(0):74-78.
APA	ZHONG XR.,ZHOU BJ.,YAN QM.,CAO FN.,LI CJ.,...&XUE ML.(1992).PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS.journal of crystal growth,119(0),74-78.
MLA	ZHONG XR,et al."PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS".journal of crystal growth 119.0(1992):74-78.