OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS | |
ZHU QS ; HIRAMATSU K ; SAWAKI N ; AKASAKI I | |
刊名 | physica status solidi b-basic research
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1992 | |
卷号 | 172期号:2页码:647-653 |
关键词 | 100 GAAS SEMICONDUCTORS INGAP |
ISSN号 | 0370-1972 |
通讯作者 | zhu qs acad sinicainst semicondpob 912beijing 100083peoples r china |
中文摘要 | the measurement of dlts on the alloy inxga1-xasyp1-y (0 less-than-or-equal-to y less-than-or-equal-to 0.3; 0.5 greater-than-or-equal-to x greater-than-or-equal-to 0.35) shows a new signal, labeled as e2, with an activation energy of e(c) - 0.61 ev and the sims signals show a large number of oxygen. to clarify is further, the energy of the deep level e2 is quantitatively calculated by using vogl's tight-binding theory and hjalmarson's deep level theory. as a result, the deep a1-symmetric level associated with an oxygen on the anion site of inxga1-xasyp1-y locates deeply in the band gap. thus, the level e2 is considered to be induced by the oxygen impurity. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14179] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | ZHU QS,HIRAMATSU K,SAWAKI N,et al. OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS[J]. physica status solidi b-basic research,1992,172(2):647-653. |
APA | ZHU QS,HIRAMATSU K,SAWAKI N,&AKASAKI I.(1992).OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS.physica status solidi b-basic research,172(2),647-653. |
MLA | ZHU QS,et al."OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS".physica status solidi b-basic research 172.2(1992):647-653. |
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