SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS | |
GISLASON HP ; YANG BH ; LINNARSSON M | |
刊名 | physical review b
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1993 | |
卷号 | 47期号:15页码:9418-9424 |
关键词 | IMPLANTED GAAS EMISSION |
ISSN号 | 0163-1829 |
通讯作者 | gislason hp univ icelandinst scidunhaga 3is-107 reykjavikiceland |
中文摘要 | it is shown that li diffusion of gaas can give rise to semi-insulating samples with electrical resistivity as high as 10(7) omegacm in undoped, n-type, and p-type starting materials. the optical properties of the compensated samples are correlated with the depletion of free carriers caused by the li diffusion. the radiative recombination of the li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. the photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14099] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | GISLASON HP,YANG BH,LINNARSSON M. SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS[J]. physical review b,1993,47(15):9418-9424. |
APA | GISLASON HP,YANG BH,&LINNARSSON M.(1993).SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS.physical review b,47(15),9418-9424. |
MLA | GISLASON HP,et al."SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS".physical review b 47.15(1993):9418-9424. |
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