SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS

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	SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
	GISLASON HP ; YANG BH ; LINNARSSON M
刊名	physical review b
	1993
卷号	47 期号:15 页码:9418-9424
关键词	IMPLANTED GAAS EMISSION
ISSN号	0163-1829
通讯作者	gislason hp univ icelandinst scidunhaga 3is-107 reykjavikiceland
中文摘要	it is shown that li diffusion of gaas can give rise to semi-insulating samples with electrical resistivity as high as 10(7) omegacm in undoped, n-type, and p-type starting materials. the optical properties of the compensated samples are correlated with the depletion of free carriers caused by the li diffusion. the radiative recombination of the li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. the photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14099]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	GISLASON HP,YANG BH,LINNARSSON M. SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS[J]. physical review b,1993,47(15):9418-9424.
APA	GISLASON HP,YANG BH,&LINNARSSON M.(1993).SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS.physical review b,47(15),9418-9424.
MLA	GISLASON HP,et al."SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS".physical review b 47.15(1993):9418-9424.