Laser SEU sensitivity mapping of deep submicron CMOS SRAM

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	Laser SEU sensitivity mapping of deep submicron CMOS SRAM
	Yu, Yongtao; Feng, Guoqiang; Chen, Rui; Han, Jianwei
刊名	Journal of Semiconductors
	2014
卷号	35 期号:6
ISSN号	1674-4926
通讯作者	Yu, Y. (yuyongtao10@mails.ucas.ac.cn)
英文摘要	The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18 μm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device. © 2014 Chinese Institute of Electronics.
收录类别	EI
语种	英语
内容类型	期刊论文
源URL	[http://ir.nssc.ac.cn/handle/122/4368]
专题	国家空间科学中心_保障部/保障与试验验证中心
推荐引用方式 GB/T 7714	Yu, Yongtao,Feng, Guoqiang,Chen, Rui,et al. Laser SEU sensitivity mapping of deep submicron CMOS SRAM[J]. Journal of Semiconductors,2014,35(6).
APA	Yu, Yongtao,Feng, Guoqiang,Chen, Rui,&Han, Jianwei.(2014).Laser SEU sensitivity mapping of deep submicron CMOS SRAM.Journal of Semiconductors,35(6).
MLA	Yu, Yongtao,et al."Laser SEU sensitivity mapping of deep submicron CMOS SRAM".Journal of Semiconductors 35.6(2014).