THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

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	THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION
	DOSTOV VL ; IPATOVA IP ; KULIKOV AY
刊名	semiconductor science and technology
	1993
卷号	8 期号:11 页码:1935-1943
关键词	GAAS SYSTEM VPE
ISSN号	0268-1242
通讯作者	dostov vl ioffe instst petersburg 194021russia
中文摘要	a theoretical description of chloride vapour-phase epitaxy (cvpe) has been proposed which contains two-dimensional (2d) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. no one of these stages is supposed to be the limiting one. calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14043]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	DOSTOV VL,IPATOVA IP,KULIKOV AY. THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION[J]. semiconductor science and technology,1993,8(11):1935-1943.
APA	DOSTOV VL,IPATOVA IP,&KULIKOV AY.(1993).THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION.semiconductor science and technology,8(11),1935-1943.
MLA	DOSTOV VL,et al."THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION".semiconductor science and technology 8.11(1993):1935-1943.