POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL
	QIAN SX ; WU JY ; YUAN S ; LI YF ; ANDERSSON TG ; CHEN ZG ; PENG WJ ; SHE WL ; YU ZX
刊名	chinese physics letters
	1991
卷号	8 期号:8 页码:428-431
关键词	PHOTOLUMINESCENCE SUPERLATTICES
ISSN号	0256-307x
中文摘要	we have measured the power dependence of the photoluminesence spectra from a set of strained inxga1-xas/gaas single quantum wells. the result shows that the excitation power has important effect on the carrier recombination processes. when the power increases from 0.5 to 14 mw, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. at high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14031]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	QIAN SX,WU JY,YUAN S,et al. POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL[J]. chinese physics letters,1991,8(8):428-431.
APA	QIAN SX.,WU JY.,YUAN S.,LI YF.,ANDERSSON TG.,...&YU ZX.(1991).POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL.chinese physics letters,8(8),428-431.
MLA	QIAN SX,et al."POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL".chinese physics letters 8.8(1991):428-431.