PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH

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	PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH
	LIU ZX ; LI GH ; HAN HX ; WANG ZP
刊名	solid-state electronics
	1994
卷号	37 期号:0 页码:885-888
ISSN号	0038-1101
通讯作者	liu zx chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china
中文摘要	a systematic investigation on the photoluminescence (pl) properties of inxga1-xas/alyga1-xas (x = 0.15, y = 0, 0.33) strained quantum wells (sqws) with well widths from 1.7 to 11.0 nm has been performed at 77 k under high pressure up to 40 kbar. the experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increase from 10.05 mev/kbar of 11.0 nm well to 10.62 mev/kbar of 1.8 nm well for in0.15ga0.85as/gaas sqws. however, the corresponding pressure coefficients slightly decrease from 9.93 mev/kbar of 9.0 nm well to 9.73 mev/kbar of 1.7 nm well for in0.15ga0.85as/al0.33ga0.67as sqws. calculations based on the kronig-penney model reveal that the increased or decreased barrier heights and the increased effective masses with pressure are the main reasons of the change in the pressure coefficients.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13963]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LIU ZX,LI GH,HAN HX,et al. PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH[J]. solid-state electronics,1994,37(0):885-888.
APA	LIU ZX,LI GH,HAN HX,&WANG ZP.(1994).PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH.solid-state electronics,37(0),885-888.
MLA	LIU ZX,et al."PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH".solid-state electronics 37.0(1994):885-888.